Jilin Sino-Microelectronics’ model JCS4N65C MOSFET has 650V drain-to-source and ± 30V gate-to-source voltage. It meets RoHS.

Large companies lead initiatives for IGBTs and MOSFETs to upgrade the line and compete with international players operating in China.

Makers of power transistors and transistor modules in China remain focused on miniaturization to match the trend for smaller and highly integrated components in compact portable electronics. They continue to increase output of SMD variants, and expect the type’s share to rise between 65 and 70 percent from about 60 percent at present.

IGBTs and MOSFETs are also on the agenda of major suppliers, which are eyeing the high growth projections for these kinds. To catch up with foreign companies operating in the country, CSR spent $243 million on an 8in IGBT line, which is the first in China and the world’s second. Opened in June this year, the facility will have an annual production of 120,000 chips and 1 million corresponding modules.

Besides CSR, the leading local players in these advanced categories include Shenzhen Bronze, Beijing LMY and Phoenix. Jilin Sino-Microelectronics Co. Ltd turns out both types, while Guangdong Hottech Industrial Co. Ltd offers MOSFETs only.

At present, the China market for IGBTs and MOSFETs is dominated by companies from the US, Europe and Japan. They include Fairchild, Infineon, TI, On Semiconductor, STMicroelectronics, International Rectifier, Toshiba, Vishay, Renesas and Maxim.

In addition to competition, climbing sales are encouraging domestic makers to step up initiatives for the line. The China Semiconductor Industry Association said the domestic semiconductor discrete devices sector will have about 8 percent revenue increase in 2015. This will be driven by the consumer electronics, computer, networking, automotive and industrial fields.

IGBTs are anticipated to achieve as high as 18 percent in 2013-15. Last year, sales hit $1.1 billion, jumping 15 percent YoY. MOSFETs will generate $2.5 billion total revenue by year-end, rising 11 percent, according to IHS. They will surpass $3 billion in 2017 at nearly 8 percent CAGR.

Fewer than 100 companies make up the sector in China, of which more than 60 percent are locally owned. Only large and midsize suppliers offer both power transistors and transistor modules. Most manufacturers have other types of diodes and transistors.

The majority of the makers are in Guangdong province, and the rest in the provinces of Zhejiang and Jiangsu, and Shanghai.

Wafer fabrication, 22nm technology ventures

Domestic suppliers will add SiC- and GaN-based power transistors to their R&D objectives in the next two years. They highlight the types’ better efficiency and smaller package compared with mainstream silicon counterparts. So far, only a few have entered these segments.

Overseas, many have released models based on the first substrate. These include Rohm and Sumitomo, while Panasonic, Sharp and Fujitsu have been turning out GaN units.

In wafers, a China semiconductor company, Tanke Blue, is developing a 150mm SiC version for power transistors.

Further integration and miniaturization in components, meanwhile, are expected to draw the attention of more local suppliers to 22nm technology in 2015. The first initiative was already taken by the Institute of Microelectronics of the Chinese Academy of Sciences with the release of 22nm MOSFETs in 2012. The organization has a partnership with XMC, a specialized foundry in Wuhan, Hubei province.

Mainstream selection

The typical power transistors and modules from China makers are bipolar, Darlington and GTR kinds.

MOSFETs and IGBTs account for a small portion of shipments. At Guangdong Hottech, the former make up 10 to 20 percent of output. The supplier expects a higher ratio in 2015, having just added MOSFETs to its lineup this year. It uses Japan-made key production equipment for the type.

Products come in through-hole or SMD configuration. The first adopts TO-3, TO-39, TO-92, TO-126, TO-220 or TO-252 package, while SMD units have SOT-23, SOT-89, SOT-143, SOT-223 or SOT-323. The latter constitutes 60 percent of Shenzhen Luguang Electronic Technology Co. Ltd’s deliveries, and will have at least 70 percent share in 2015.

There are low-, medium- and high-power variants, respectively with less than 1W, 1 to 5W and above 5W power dissipation.

China enterprises obtain chips mainly from Japan and South Korea. Silicon and plastic are from local sources or overseas depending on buyers’ requirement. Passive components and diodes used in transistor modules are mostly from the domestic supply as well.

The cost of inputs has not changed much in recent months, keeping prices stable. The majority of makers expect the trend to persist until next year.

Related report:
Diodes: Supply of SMD units continues to climb

Product gallery

Guangdong Fenghua Advanced Technology Holding Co. Ltd
(China)

Model: FHA1001
MOQ: Negotiable
Delivery: 7 days
Description: Bipolar PNP epitaxial planar type; low collector saturation voltage; high power dissipation; RoHS

Guangdong Hottech Industrial Co. Ltd
(China)

Model: 2SC1815 (C1815)
Description: NPN type; 50V, 150mA; SOT-23 package; 150 C junction temperature; 3,000 units, 100g per reel; HF marking; RoHS

Jilin Sino-Microelectronics Co. Ltd
(China)

Model: JCS4N65C
MOQ: 10,000 units
Delivery: 10 days
Description: MOSFET type; 650V drain-to-source, ±30V gate-to-source voltage; 4A continuous, 16A pulsed drain current; 33 to 100W power dissipation; 100% avalanche test; -55 to 150 C operating temperature; RoHS

Shenzhen Luguang Electronic Technology Co. Ltd
(China)

Model: 78L05
MOQ: 3,000 units
Delivery: 5 days
Description: Bipolar PNP type; 30V input voltage; 5V, maximum 0.1A output; 0.5W continuous total power dissipation; SOT-89 package; 0 to 125 C operating temperature