Manufacturers of MOSFETs turn R&D to types based on SiC, GaN materials

Technology advances in electronics draw attention to compound semiconductor inputs that enable greater miniaturization and efficiency in MOSFETs.

Production of MOSFETs in China continues to hew to traditional silicon-based units, but the adoption of silicon carbide or SiC and gallium nitride or GaN is expected to gain more following in the future. There have been releases from local suppliers using the first compound material, while only the 55th Research Institute of China Electronics Technology Group Corp. or CETC has introduced GaN power devices.

Reasunos Semiconductor Technology Co. Ltd has launched model RSM90065W TO-247 SiC MOSFET for switching power supplies, high-voltage DC-DC converters, motor drives and solar inverters. The unit can handle high-speed switching with low capacitance, and high blocking voltage with reduced drain-source on resistance or RDS (on). Its rated voltage is 900V, rated current 36A and typical RDS (on) 0.065ohm.

Compared with silicon MOSFETs, SiC variants support faster switching but have lower switching loss and resistance, and better stability under elevated temperatures. This feature set makes them a hot choice for electric vehicles or EVs, spurring China component makers to persist in R&D despite the high price currently inhibiting broad adoption of SiC units.

Pushing suppliers to this pursuit is the projected growth spurt in the global market for SiC and GaN power devices. The sector will surge to $1 billion in 2020 and hit $3.7 billion in 2025, according to IHS. Back in 2015, the value was at $210 million.

Overall, the MOSFET manufacturing sector in China has been steadily expanding. Its total revenue from the power MOSFET subcategory alone reached $3.01 billion in 2017 from $2.25 billion in 2013, said IHS. The figure will rise further in the months ahead and through 2019.

Local makers attribute this to requirement in computers, servers, and consumer, automotive and industrial electronics. In fact, high demand, particularly from the mobile electronics market, resulted in a supply shortage of MOSFETs in 2017. Analysts said the problem could persist in the next one or two years.

To take advantage of this opportunity, many China MOSFET manufacturers plan to raise production. Chongqing Pinwei Enterprise Co. Ltd is prepared to boost output by another 5 percent in 2018 and maintain this rate in 2019.

China is a major production hub for MOSFETs, responsible for 30 percent of global shipments. This is largely because of the presence of industry leaders there. While a minority in the 200-plus maker pool, these frontrunners account for more than half of the country's market. They include Infineon, TI, ON Semiconductor, Sinopower, APEC and Niko Semiconductor.

The rest of the suppliers are domestic enterprises exporting 30 to 60 percent of turnout to Europe, North America and Asia. Jiangsu Changjiang, Nexperia, BYD, Shanghai Sino-IC Microelectronics and Nanjing Micro One are among the key local players.

Foreign and local companies offer other discrete devices such as ICs, rectifiers, transistors and diodes.

Half of the makers are in Guangdong province. Many are also in the provinces of Zhejiang and Jiangsu, and Shanghai.

Typical MOSFET range

Through-hole and SMD units in N and P-channel types constitute the mainstream selection of MOSFETs from China manufacturers. The former comes in TO and PGA packages and the second in D-PARK, SOT, SOP, QFP and PLCC, all in a variety of sizes.

Guangdong Fenghua Advanced Technology Holding Co. Ltd's FHK4N60 model is in SMD configuration. It suits power supplies, DC-DC converters, PWM motor controls and bridge circuits. Also for surface mounting is Shenzhen Jinyu Semiconductor Co. Ltd's PXT2222A model.

Chongqing Pingwei's 13N65(F,B,H)S DIP model is available in TO-220AB, ITO-220AB, TO-263 and TO-262 packages, while Reasunos has the RS100N15D TO-252 model.

Gate polysilicon, SiO₂, plastic and ceramic are among the key inputs used in MOSFET production. These are generally obtained from the local supply unless buyers require other sources.

The cost of materials rose in 2017. With this, the higher outlay for labor and the component supply shortage, prices climbed by 10 to 30 percent.

Most China companies predict the situation will not change much in coming months and might lead to further increases in input outlay and product quotes. They, however, believe the adjustment will not be as high as in the past year.

The products in this gallery have been handpicked by our China-based market analyst for representing current trends in MOSFETs from China makers.

MOSFET in TO, ITO package options

This MOSFET, 13N65(F,B,H)S model, from Chongqing Pingwei Enterprise Co. Ltd comes in TO-220AB, ITO-220AB, TO-263 or TO-262 package. It has 650V drain-to-source voltage, and 13A continuous drain and avalanche current. The reverse diode dV/dt is 5.5V/ns. The component operates in as low as -55 C to as high as 150 C.

The minimum order is 1,000 units. Delivery takes 7 days.

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Fast-switching MOSFET in SMD form

Guangdong Fenghua Advanced Technology Holding Co. Ltd's model FHK4N60 is for power supplies, DC-DC converters, PWM motor controls and bridge circuits. It boasts fast switching time, low gate charge and on-state resistance, and high rugged avalanche properties.

Orders are delivered within 3 days. The minimum quantity is 20,000 units.

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100V, 15A MOSFET in TO-252 package

Reasunos Semiconductor Technology Co. Ltd offers the RS100N15D TO-252 model, a 100V, 15A MOSFET with low RDS (on) and enhanced thermal performance.

The minimum order of 1,000 units has a 30-day delivery lead time.

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SMD MOSFET with 150 C junction temperature

The PXT2222A model from Shenzhen Jinyu Semiconductor Co. Ltd is an SMD MOSFET with 75V collector-base voltage, 40V collector-emitter voltage and 6V emitter-base voltage. The collector current-continuous is 600mA and the collector power dissipation 0.5W. The junction temperature is 150 C.

The maker requires a minimum order of 10,000 units. Delivery lead time is 7 days.

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