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Micron has unveiled the first 3D NAND memory for mobile devices using UFS 2.1 with a 32GB capacity.

Source: EE Times
Until recently 3D NAND has been only hitting the market within SSDs, but now Micron Technology said it is ready for mobile devices.
The company has introduced its first 3D NAND memory technology optimized for mobile devices and its first products based on the Universal Flash Storage or UFS 2.1 standard. Micron's first foray into mobile 3D NAND is a 32GB offering aimed at the high-end and midrange smartphone segments, which make up approximately 50 percent of the worldwide volume, said Gino Skulick, VP of marketing in Micron's mobile business unit in a telephone interview with EE Times. The company is sampling the new 3D NAND with mobile customers and partners, and it will be widely available by the end of 2016.
Micron 3D NAND for mobile is the first to be built using floating gate technology, and stacks layers of data storage cells vertically to create storage capacity that is three times that of previous generation planar NAND technologies. Skulick said the smaller 3D NAND memory die measures only 60.217mm, enabling a tiny footprint for the memory that can free up room for a larger battery to meet user expectations or allow for the creation of even smaller form factor devices. Micron's 3D NAND die is up to 30 percent smaller than planar NAND die of the same capacity, he said.
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