SiC/GaN poised for power

Global SourcesUpdated on 2023/12/01

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Yole Developpement predicts new substrates to dominate.

SiC wafers (middle) greatly reduce the trench size required for the same power transistor over conventional silicon type (right). Source: Toyota, EETimes

Yole Developpement projects power transistors will radically shift from silicon wafers to SiC and GaN substrates to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report.

One of the big drivers behind the switch is the electric and hybrid vehicle industries, which Yole predicts will push the SiC technology to minimize the size of power electronics.

Wide-bandgap or WBG materials such as SiC and GaN have been slower to adopt than Yole previously predicted. The new report, however, said companies developing them are on the fast-track to overcoming the few remaining obstacles to mass use.

Besides EVs and HEVs, Yole predicts SiC dominance in low- and high-voltage applications, respectively in 600V and up to 3,300V. These include power factor correction, photovoltaics, diodes, wind, UPS and motor drives.

To read the full article, please go to EETimes.

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SiC/GaN poised for power

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